[PDF下载] 微机电器件设计.制造及计算机辅助设计

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微机电器件设计.制造及计算机辅助设计

作者:郭占社[著]

页数:272

出版社:北京航空航天大学出版社

出版日期:2016

ISBN:9787512421097

高清校对版pdf(带目录)

夸克网盘:https://pan.quark.cn/s/b98544dab2e7

百度网盘:https://pan.baidu.com/s/10zKJWpNOnVDp1oY4YWCzWA?pwd=k1sm

内容简介

Thisbookfirstlyintroducesthepertinentfundamentaltheory,importantmaterialandfabricationprocessofmicroGelectromechanicalsystems.Basedonthesetheories,thedesignruleandimportantengineeringexamplesaredescribedindetail.Then,manyengineeringapplicationsforMEMSincludingtheaccelerationmeasurement,theangularspeedmeasurementandthepressuremeasurementareintroduced.Finally,finiteelementmethodisintroducedinordertoprovethecorrectnessofthedesign.Thisengineeringapplicationofsimulationincludesthestaticandmodalanalysisofthebeam,capacitanceanalysis,thermalGstructureanalysisofthedeviceandfatigueanalysisetc.Itcanbeselectedasthereferencetothepostgraduates,undergraduatesandpertinentengineeringstaffwhoseresearch directionsareinstrumentationscienceandtechnology,controlscienceandengineering,mechanicalengineeringetc.

目录

Chapter1 Introduction ………………………………………………………………………… 1
1.1 ConceptofMEMS ……………………………………………………………………… 1
1.2 DevelopmentofMEMS ………………………………………………………………… 4
1.3 MEMSCAD …………………………………………………………………………… 9
Chapter2 BasictheoryofMEMS …………………………………………………………… 12
2.1 TheoryofelectrostaticMEMScombactuators …………………………………… 12
2.1.1 Introduction ……………………………………………………………………… 12
2.1.2 Operatingprinciples …………………………………………………………… 13
2.1.3 Platecapacitortheoryinidealcondition ……………………………………… 14
2.1.4 ThemodifiedmodelofMEMSplatecapaciator ……………………………… 17
2.1.5 Calculationofelectrostaticcombdrivingforceinidealsituation …………… 24
2.1.6 Weakcapacitancedetectionmethodofelectrostaticcombdrive …………… 26
2.2 RelevanttheoreticalcalculationsfortheMEMScantileverbeam ………………… 34
2.2.1 Introduction ……………………………………………………………………… 34
2.2.2 Theoreticalcalculationmethodforcantileverbeam ………………………… 35
2.2.3 RelevanttheoreticalcalculationofaxialtensileandcompressiveonsingleGend
clampedbeams ………………………………………………………………… 36
2.2.4 RelatedtheoreticalcalculationsofdoubleGendclampedbeamsaxialtension
andcompression ………………………………………………………………… 40
2.3 MembranetheoryofMEMS ………………………………………………………… 47
2.3.1 Theoryofclampedaroundcirculardiaphragm ………………………………… 48
2.3.2 Theoryofclampedaroundrectangularflatdiaphragm ……………………… 49
References …………………………………………………………………………………… 52
Chapter3 MEMSmaterials …………………………………………………………………… 53
3.1 Monocrystallinesilicon ……………………………………………………………… 53
3.1.1 Introduction ……………………………………………………………………… 53
3.1.2 Crystalorientationofmonocrystallinesilicon ………………………………… 55
3.2 Polycrystallinesilicon ………………………………………………………………… 64
3.3 Silica …………………………………………………………………………………… 66
3.4 Piezoelectricmaterials ………………………………………………………………… 67
3.4.1 Piezoelectriceffectandinversepiezoelectriceffectofmaterials …………… 67
3.4.2 Quartzcrystal …………………………………………………………………… 68
3.4.3 Piezoelectricceramics …………………………………………………………… 73
3.5 OtherMEMSmaterials ……………………………………………………………… 75
3.6 Summary ……………………………………………………………………………… 76
Chapter4 MEMStechnology ………………………………………………………………… 77
4.1 MEMSlithographyprocess ………………………………………………………… 78
4.2 KeytechnologyofMEMSlithographyprocess …………………………………… 80
4.2.1 Wafercleaning …………………………………………………………………… 80
4.2.2 Siliconoxidation ………………………………………………………………… 80
4.2.3 Spincoatingprocess …………………………………………………………… 87
4.2.4 Prebaking ………………………………………………………………………… 90
4.2.5 Exposure ………………………………………………………………………… 92
4.2.6 Development ……………………………………………………………………… 94
4.2.7 Hardening ………………………………………………………………………… 96
4.2.8 FabricationoftheSiO2 window ………………………………………………… 97
4.3 SubsequentprocessofMEMS ……………………………………………………… 98
4.3.1 Bulksilicontechnology ………………………………………………………… 98
4.3.2 Surfacesiliconprocess ………………………………………………………… 103
4.3.3 LIGAtechnology ……………………………………………………………… 104
4.3.4 Sputteringtechnology ………………………………………………………… 105
4.3.5 LiftGoffprocess ………………………………………………………………… 107
4.4 Filmpreparationtechnology………………………………………………………… 107
4.5 Bondingprocess ……………………………………………………………………… 108
4.5.1 Anodicbondingprocess………………………………………………………… 109
4.5.2 SiliconGsilicondirectbonding ………………………………………………… 110
4.5.3 Metaleutecticbonding ………………………………………………………… 113
4.5.4 Coldpressureweldingbonding ……………………………………………… 114
4.6 Engineeringexamplesofcombinationformultipleprocessestofabricatethe
MEMSdevice ………………………………………………………………………… 115
4.6.1 Introduction …………………………………………………………………… 115
4.6.2 EngineeringexampleoffabricationprocessforresonantMEMSgyroscope
…………………………………………………………………………………… 115
4.6.3 EngineeringexampleofelectromagneticmicroGmotorproductionprocess
…………………………………………………………………………………… 118
4.7 Summary ……………………………………………………………………………… 124
References…………………………………………………………………………………… 125
Chapter5 Frictionwearandtearundermicroscale ……………………………………… 126
5.1 OffGchiptestingmethodformicrofriction ………………………………………… 127
5.1.1 MicroGtribologytestwiththepinGonGdiscmeasuringmethod ……………… 127
5.1.2 MicroGtribologytestwithAFM ……………………………………………… 128
5.1.3 MicroGtribologytestwithspecialmeasuringdevice ………………………… 130
5.2 OnGchiptestingmethodformicrofriction ………………………………………… 132
5.2.1 OnGchiptestingmethodactuatedbyelectrostaticforce …………………… 132
5.2.2 OnGchipmicroGfrictiontestingmethodusingthemechanismcharactersof
thebimorphmaterial…………………………………………………………… 139
5.3 ExampleofthedesignforanonGchipmicroGfrictionstructure ………………… 141
5.3.1 Structureandworkingprinciple ……………………………………………… 141
5.3.2 Calculationofpertinenttheory ……………………………………………… 142
5.3.3 Technologicalanalysisofstructuraldesign ………………………………… 148
5.3.4 Testingresultsanddataanalysis……………………………………………… 152
5.3.5 ResearchandtestofwearproblemofMEMSdevices ……………………… 161
5.4 Summary ……………………………………………………………………………… 165
References…………………………………………………………………………………… 165
Chapter6 MEMStestingtechnologyandengineeringapplication ………………………… 169
6.1 Accelerationmeasurementandcorrespondingsensors …………………………… 169
6.1.1 Workingprincipleoftheaccelerationsensorandtheclassification ……… 170
6.1.2 Capacitivesiliconmicromechanicalaccelerometer …………………………… 172
6.1.3 Piezoresistivesiliconmicromechanicalaccelerometer ……………………… 173
6.1.4 Piezoelectricmicromechanicalaccelerometer ………………………………… 174
6.1.5 ResonantsiliconMEMSaccelerometer ……………………………………… 175
6.2 Angularspeedmeasurementandcorrespondingsensors ………………………… 177
6.2.1 Workingprinciple ……………………………………………………………… 177
6.2.2 DevelopmentofMEMSgyroscope …………………………………………… 178
6.2.3 Classificationofmicromechanicalgyroscope ………………………………… 188
6.3 Pressuremeasurementandcorrespondingsensors ……………………………… 190
6.3.1 Workingpincinple ……………………………………………………………… 190
6.3.2 Resonantsiliconmicromechanicalpressuresensoranditsdevelopment … 193
6.4 MeasurementofmicroGtorque ……………………………………………………… 198
6.4.1 Introduction …………………………………………………………………… 198
6.4.2 Workingprincipleofnoncontactmethod …………………………………… 199
6.4.3 Theoreticalcalculation ………………………………………………………… 200
6.4.4 Correspondingequipmenttorealizethenoncontactmethod ……………… 205
6.4.5 Experimentresultanddiscussion …………………………………………… 209
6.5 Microscopicmorphologytestingmethod ………………………………………… 211
6.6 Summary ……………………………………………………………………………… 212
References…………………………………………………………………………………… 212
Chapter7 Applicationexamplesofthefiniteelementmethodinthedesignof
MEMSdevices …………………………………………………………………… 218
7.1 Importantconceptsofthesoftware………………………………………………… 218
7.2 IntroductionoftheAnsyssoftwareinterface……………………………………… 220
7.3 ThecoordinatesysteminAnsys …………………………………………………… 221
7.4 Engineeringexamples ……………………………………………………………… 226
7.4.1 StaticanalysisofsingleGclampedbeam ……………………………………… 226
7.4.2 ModalanalysisofdoubleGclampedbeam ……………………………………… 245
7.4.3 CapacitanceanalysisofMEMSelectrostaticcombfingersdrive …………… 257
7.4.4 Fatiguestrengthcalculationexample ………………………………………… 264
7.5 Summary ……………………………………………………………………………… 272
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